BIPLOT ANALYSIS OF SILICON DIOXIDE ON EARLY GROWTH OF SUNFLOWER

Naser Sabaghnia; Mohsen Janmohammadi

BIPLOT ANALYSIS OF SILICON DIOXIDE ON EARLY GROWTH OF SUNFLOWER

Naser Sabaghnia

sabaghnia@maragheh.ac.ir
Department of Agronomy and Plant Breeding, Agriculture College, University of Maragheh, Iran (Iran, Islamic Republic of)

Mohsen Janmohammadi

Department of Agronomy and Plant Breeding, Agriculture College, University of Maragheh, Iran (Poland)

Abstrakt

Research into nanotechnology has advanced in almost all fields of technology and the aim of this study
was to evaluate the role of nano-silicon dioxide (nano-SiO₂) in germination performance sunflower. Germination and seedling growth are the most important stage of plant development and are critical factors to crop
production and are essential to achieve optimum performance. The effects of pre-germination hydration in
solutions of nano-SiO2 (0, 0.2, 0.4, 0.6, 0.8, 1 and 1.2 mM for 8 h) on germination characteristics of sunflower were investigated. The trait by treatment (TT) biplot explained 93% of the total variation of the standardized data (77% and 16% for the first and second principal components, respectively). According to polygon-view of TT biplot, T2 (0.2 mM) had the highest values for all of the measured traits except mean germination time and the time to 50% germination. The germination percentage was determined as the best trait and
showed the high association with promptness index, energy of germination and germination rate traits. The
results of the present study indicated that pre-sowing seed treatments with low concentration of nano-SiO₂ had
favorable effect sunflower seed germination and seedling early growth. Such a similar outcome could be
applied in the future to outline other crops in response to nano-particles as well as to help define tolerance
tools for recommendations in stressful conditions in the world.

Słowa kluczowe:

germination rate, nano-sized materials, seed priming, TT biplot

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